| 发明名称 |
RETAINING STRAIN IN FINFET DEVICES |
| 摘要 |
A method for fabricating a semiconductor device comprises patterning a strained fin from a strained layer of semiconductor material arranged on a substrate, depositing a first layer of semiconductor material on the fin and exposed portions of the substrate, patterning and etching to remove a portion of the first layer of semiconductor material and a portion of the fin to expose a portion of the substrate, depositing a second layer of semiconductor material on exposed portions of the substrate and the first layer of semiconductor material, and patterning and etching to remove a portion of the second layer of semiconductor material layer and the first layer of semiconductor material to define a dummy gate stack, the dummy gate stack is operative to substantially maintain the strain in the strained fin. |
| 申请公布号 |
US2017125590(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615344888 |
申请日期 |
2016.11.07 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Doris Bruce B.;Karve Gauri;Lie Fee Li;Wang Junli |
| 分类号 |
H01L29/78;H01L21/3065;H01L29/06;H01L29/66;H01L29/165 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
patterning a strained fin from a strained layer of semiconductor material arranged on a substrate; depositing a first layer of semiconductor material on the fin and exposed portions of the substrate; patterning and etching to remove a portion of the first layer of semiconductor material and a portion of the fin to expose a portion of the substrate; depositing a second layer of semiconductor material on exposed portions of the substrate and the first layer of semiconductor material; and patterning and etching to remove a portion of the second layer of semiconductor material layer and the first layer of semiconductor material to define a dummy gate stack, the dummy gate stack is operative to substantially maintain the strain in the strained fin. |
| 地址 |
Armonk NY US |
