| 发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF |
| 摘要 |
In some embodiments, a semiconductor device and a fabricating method thereof are provided. The method can comprise: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; forming an epitaxial substrate layer on the semiconductor substrate on both sides of the gate structure; forming a hard mask layer conformally covering the epitaxial substrate layer, the gate structure and the semiconductor substrate; etching the hard mask layer to form a hard mask sidewall layer on sidewall surfaces of the gate structure and on the epitaxial substrate layer; using the hard mask sidewall layer as a mask to etch the epitaxial substrate layer and the semiconductor substrate to form trenches on both sides of the gate structure; and forming a stress layer in the trenches. |
| 申请公布号 |
US2017125589(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615343433 |
申请日期 |
2016.11.04 |
| 申请人 |
Semiconductor Manufacturing International (Beijing) Corporation ;Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
XU CHANG CHUN |
| 分类号 |
H01L29/78;H01L29/08;H01L21/02;H01L21/3065;H01L21/308;H01L21/8238;H01L29/165;H01L21/311;H01L21/306;H01L29/06;H01L27/092;H01L29/66;H01L29/161 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, comprising:
providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; forming an epitaxial substrate layer on the semiconductor substrate on both sides of the gate structure; forming a hard mask layer conformally covering the epitaxial substrate layer, the gate structure and the semiconductor substrate; etching the hard mask layer to form a hard mask sidewall layer on sidewall surfaces of the gate structure and on the epitaxial substrate layer; using the hard mask sidewall layer as a mask to etch the epitaxial substrate layer and the semiconductor substrate to form trenches on both sides of the gate structure; and forming a stress layer in the trenches. |
| 地址 |
Beijing CN |
