发明名称 |
SEMICONDUCTOR CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor crystal substrate includes a substrate, a first semiconductor layer including a nitride semiconductor and formed over the substrate, a second semiconductor layer including a nitride semiconductor and formed over the first semiconductor layer, a first cap layer formed on the second semiconductor layer, and a second cap layer formed on the first cap layer. Each of the first semiconductor layer and the second semiconductor layer has a single-crystal structure, the first cap layer has one of a single-crystal structure and a polycrystalline structure, and the second cap layer has an amorphous structure. |
申请公布号 |
US2017125564(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201615276023 |
申请日期 |
2016.09.26 |
申请人 |
FUJITSU LIMITED |
发明人 |
KOTANI JUNJI;NAKAMURA NORIKAZU |
分类号 |
H01L29/778;H01L29/20;H01L29/66 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor crystal substrate, comprising:
a substrate; a first semiconductor layer including a nitride semiconductor and formed over the substrate; a second semiconductor layer including a nitride semiconductor and formed over the first semiconductor layer; a first cap layer formed on the second semiconductor layer; and a second cap layer formed on the first cap layer, wherein each of the first semiconductor layer and the second semiconductor layer has a single-crystal structure; the first cap layer has one of a single-crystal structure and a polycrystalline structure; and the second cap layer has an amorphous structure. |
地址 |
Kawasaki-shi JP |