发明名称 SEMICONDUCTOR CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 A semiconductor crystal substrate includes a substrate, a first semiconductor layer including a nitride semiconductor and formed over the substrate, a second semiconductor layer including a nitride semiconductor and formed over the first semiconductor layer, a first cap layer formed on the second semiconductor layer, and a second cap layer formed on the first cap layer. Each of the first semiconductor layer and the second semiconductor layer has a single-crystal structure, the first cap layer has one of a single-crystal structure and a polycrystalline structure, and the second cap layer has an amorphous structure.
申请公布号 US2017125564(A1) 申请公布日期 2017.05.04
申请号 US201615276023 申请日期 2016.09.26
申请人 FUJITSU LIMITED 发明人 KOTANI JUNJI;NAKAMURA NORIKAZU
分类号 H01L29/778;H01L29/20;H01L29/66 主分类号 H01L29/778
代理机构 代理人
主权项 1. A semiconductor crystal substrate, comprising: a substrate; a first semiconductor layer including a nitride semiconductor and formed over the substrate; a second semiconductor layer including a nitride semiconductor and formed over the first semiconductor layer; a first cap layer formed on the second semiconductor layer; and a second cap layer formed on the first cap layer, wherein each of the first semiconductor layer and the second semiconductor layer has a single-crystal structure; the first cap layer has one of a single-crystal structure and a polycrystalline structure; and the second cap layer has an amorphous structure.
地址 Kawasaki-shi JP