| 主权项 |
1. An Insulated Gate Bipolar Transistor (IGBT) comprising:
a semiconductor substrate having a main surface; and elements having a plurality of insulated gate transistor parts arranged in a row in one direction over the main surface; the elements including a first element located at an end of the row in the one direction; and a second element located more centrally in the row in the one direction than the first element; wherein the first element includes a first insulated gate transistor part, and the second element includes a second insulated gate transistor part and a third insulated gate transistor part that are arranged symmetrically to each other in the one direction, and wherein the first insulated gate transistor part includes a first gate electrode formed over a portion of a first base region at a first side of the first base region and a portion of a first element separation structure formed in the main surface, the first base region being formed in the main surface; wherein the second insulated gate transistor part and the third insulated gate transistor part include a second gate electrode and a third gate electrode, respectively, which are formed over a second base region formed in the main surface, the second base region being common to the second gate electrode and the third gate electrode, wherein in the one direction, a distance between the second gate electrode and the third gate electrode is more than twice as long as a distance between the first gate electrode and a second element separation structure formed on a second side of the first base region that is opposite to the first side of the first base region, and wherein a channel length of the second element located centrally is same as a channel length of the first element located at the end. |
