| 发明名称 |
ENHANCED TEMPERATURE COMPENSATION FOR RESISTIVE MEMORY CELL CIRCUITS |
| 摘要 |
A computer-implemented method for performing a voltage-based measurement of a resistive memory cell having a plurality of programmable cell states includes providing, via a processor, a prebiased voltage at a connecting node. The method further includes prebiasing a bitline capacitance of the resistive memory cell. In other aspects, the method includes settling, via the processor, a sensing circuit to a target voltage. The method further includes outputting a resultant value based on a sensed voltage at the resistive memory cell. |
| 申请公布号 |
US2017125096(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615366386 |
申请日期 |
2016.12.01 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Papandreou Nikolaos;Pozidis Charalampos;Stanisavljevic Milos |
| 分类号 |
G11C13/00;G11C11/56 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A computer-implemented method for performing a voltage-based measurement of a resistive memory cell having a plurality of programmable cell states, the method comprising:
providing, via a processor, a prebiased voltage at a connecting node; prebiasing a bitline capacitance of the resistive memory cell; settling, via the processor, a sensing circuit to a target voltage; and outputting a resultant value based on a sensed voltage at the resistive memory cell. |
| 地址 |
Armonk NY US |
