| 发明名称 |
BUFFER CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, OSCILLATOR, ELECTRONIC APPARATUS, AND BASE STATION |
| 摘要 |
A buffer circuit includes a first MOSFET including a first source electrode, a first gate electrode, and a first drain electrode, and a second MOSFET, which includes a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, and the first gate electrode and the second gate electrode are electrically connected to each other. |
| 申请公布号 |
US2017126221(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615332778 |
申请日期 |
2016.10.24 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
HAYASHI Kenji |
| 分类号 |
H03K17/06;H03B5/02;H01L23/528;H01L27/02;H01L27/088;H01L29/423 |
主分类号 |
H03K17/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A buffer circuit comprising:
a first MOSFET comprising a first source electrode, a first gate electrode, and a first drain electrode; and a second MOSFET, which comprises a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, wherein the first gate electrode and the second gate electrode are electrically connected to each other. |
| 地址 |
Tokyo JP |
