| 发明名称 |
Semiconductor Device Structure With 110-PFET and 111-NFET Current Flow Direction |
| 摘要 |
A FinFET comprises a hybrid substrate having a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer; a first set of fins disposed in the top wafer and oriented in a <110> direction of the (100) silicon; and a second set of fins disposed in the handle wafer and oriented in a <112> direction of the (110) silicon. The first set of fins and the second set of fins are aligned. |
| 申请公布号 |
US2017125446(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201715403357 |
申请日期 |
2017.01.11 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Hashemi Pouya;Khakifirooz Ali;Mochizuki Shogo;Reznicek Alexander |
| 分类号 |
H01L27/12;H01L29/06;H01L29/167;H01L29/161;H01L21/762;H01L27/092;H01L21/8238;H01L21/02;H01L21/306;H01L29/04;H01L21/84 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure, comprising:
a first substrate comprising (100) silicon and having at least one fin comprising at least one group IV element; an oxide layer on the first substrate; and a second substrate comprising (110) silicon on the oxide layer and having at least one fin comprising at least one group IV element, the at least one fin on the second substrate being aligned with the at least one fin on the first substrate; wherein the at least one fin of the first substrate extends from a surface of the first substrate, and wherein the at least one fin of the second substrate extends from the second substrate, through the oxide layer, and through the first substrate. |
| 地址 |
Armonk NY US |
