发明名称 |
Polymer-Based-Semiconductor Structure with Cavity |
摘要 |
A structure includes a device die, and an encapsulating material encapsulating the device die therein. The encapsulating material has a top surface coplanar with a top surface of the device die, and a cavity in the encapsulating material. The cavity penetrates through the encapsulating material. |
申请公布号 |
US2017125317(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201615144262 |
申请日期 |
2016.05.02 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Kuo Hung-Yi;Yu Chen-Hua;Tsai Hao-Yi |
分类号 |
H01L23/31;H01L21/48;H01L49/02;H01L21/56;H01L23/485;H01L23/498 |
主分类号 |
H01L23/31 |
代理机构 |
|
代理人 |
|
主权项 |
1. A structure comprising:
a device die; an encapsulating material encapsulating the device die therein; and a cavity in the encapsulating material, wherein the cavity penetrates through the encapsulating material. |
地址 |
Hsin-Chu TW |