TRENCH SILICIDE CONTACTS WITH HIGH SELECTIVITY PROCESS

摘要

A method for forming self-aligned contacts includes patterning a mask between fin regions of a semiconductor device, etching a cut region through a first dielectric layer between the fin regions down to a substrate and filling the cut region with a first material, which is selectively etchable relative to the first dielectric layer. The first dielectric layer is isotropically etched to reveal source and drain regions in the fin regions to form trenches in the first material where the source and drain regions are accessible. The isotropic etching is super selective to remove the first dielectric layer relative to the first material and relative to gate structures disposed between the source and drain regions. Metal is deposited in the trenches to form silicide contacts to the source and drain regions.

主权项

1. A device having self-aligned contacts, comprising:
a cut region formed between fin regions down to a substrate of a semiconductor device, the cut region including a dielectric material; source and drain regions in the fin regions and gate structures disposed between the source and drain regions; and silicide contacts connected to the source and drain regions, wherein the silicide contacts have a width that is larger in contact with the source and drain regions and reduced with height to a level of the gate structures.