Method of Forming a Flexible Semiconductor Layer and Devices on a Flexible Carrier

摘要

A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate by isolating cells in the semiconductor substrate by applying a hardmask to the semiconductor substrate and etching exposed semiconductor substrate down to the epoxy; and removing the hardmask and applying a pressure-sensitive tape to the semiconductor substrate to remove the semiconductor substrate from the interfacial release layer; wherein processing the semiconductor substrate further comprises one or more of patterning the semiconductor substrate, thermally treating the semiconductor substrate, thinning the semiconductor substrate, and depositing a film on the semiconductor substrate.