APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES

摘要

A device for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure, and a rotary chuck located within the closed process chamber. The closed process chamber comprises an annular duct surrounding the rotary chuck and extending along a first direction radially outwardly of the rotary chuck and obliquely to a rotary axis of the rotary chuck, from an inlet end that communicates with the rotary chuck to an outlet end that communicates with an exhaust duct. The annular duct comprises a duct section extending between the inlet and outlet ends that is defined by an inner chamber wall spaced apart from an outer chamber wall. The extent of the duct section along the first direction is at least twice a spacing of the inner and outer chamber walls throughout the duct section, as measured in a direction perpendicular to the first direction.

主权项

1. Device for processing wafer-shaped articles, comprising a closed process chamber providing a gas-tight enclosure, and a rotary chuck located within said closed process chamber, said rotary chuck being adapted to hold a wafer shaped article of a predetermined diameter thereon;
said closed process chamber comprising an annular duct surrounding said rotary chuck and extending along a first direction radially outwardly of said rotary chuck and obliquely to a rotary axis of said rotary chuck, from an inlet end that communicates with said rotary chuck to an outlet end that communicates with an exhaust duct; wherein said annular duct comprises a duct section extending between said inlet and outlet ends that is defined by an inner chamber wall spaced apart from an outer chamber wall, wherein each of said inner chamber wall and outer chamber wall is frustoconical and the first direction is defined as a line whose position is intermediate and equidistant said inner chamber wall and outer chamber wall over a majority of their length, and wherein an extent of said duct section along said first direction is at least twice a spacing of said inner and outer chamber walls throughout said duct section, as measured in a direction perpendicular to said first direction.