| 发明名称 |
METHOD OF DOPING 2-DIMENSIONAL SEMICONDUCTOR |
| 摘要 |
The present disclosure relates to a method of doping a 2-dimensional semiconductor. The method of doping a 2-dimensional semiconductor includes: forming an insulating layer including photosensitive particles on a substrate; moving the photosensitive particles included in the insulating layer to a surface of the insulating layer through a heat treatment; forming a 2-dimensional semiconductor layer on the insulating layer; and doping a 2-dimensional semiconductor material included in the 2-dimensional semiconductor layer by exposing the 2-dimensional semiconductor material to a light corresponding to an absorption wavelength of the photosensitive particles included in the insulating layer. |
| 申请公布号 |
US2017125263(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615339892 |
申请日期 |
2016.10.31 |
| 申请人 |
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
PARK Jin Hong;PARK Hyung Youl |
| 分类号 |
H01L21/385;H01L21/02;H01L21/477 |
主分类号 |
H01L21/385 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of doping a 2-dimensional semiconductor, comprising:
forming an insulating layer including photosensitive particles on a substrate; moving the photosensitive particles included in the insulating layer to a surface of the insulating layer through a heat treatment; forming a 2-dimensional semiconductor layer on the insulating layer; and doping a 2-dimensional semiconductor material included in the 2-dimensional semiconductor layer by exposing the 2-dimensional semiconductor material to a light corresponding to an absorption wavelength of the photosensitive particles included in the insulating layer. |
| 地址 |
Suwon-si KR |
