LOW TEMP SINGLE PRECURSOR ARC HARD MASK FOR MULTILAYER PATTERNING APPLICATION

摘要

Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.

主权项

1. A method of forming a layer, comprising:
delivering a first deposition gas to a substrate in a process chamber, the first deposition gas comprising an SiOC precursor and a first flow rate of an oxygen-containing precursor; activating the first deposition gas using a plasma, the first deposition gas forming a hardmask comprising an SiOC containing layer over an exposed surface of the substrate; delivering a second deposition gas to the SiOC containing layer, the second deposition gas comprising an SiO precursor and a second flow rate of the oxygen containing precursor, the second flow rate being higher than the first flow rate; and activating the second deposition gas using a plasma, the second deposition gas forming an SiO containing layer over the hardmask, the SiO containing layer being free of carbon.