发明名称 |
MAGNETORESISTIVE DEVICES AND METHODS FOR MANUFACTURING MAGNETORESISTIVE DEVICES |
摘要 |
A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process. |
申请公布号 |
US2017125044(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201715400521 |
申请日期 |
2017.01.06 |
申请人 |
Infineon Technologies AG |
发明人 |
Raberg Wolfgang;Strasser Andreas;Wendt Hermann;Pruegl Klemens |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a magnetoresistive device, the method comprising:
depositing a magnetoresistive stack, an etch-stop layer (ESL), and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. |
地址 |
Neubiberg DE |