发明名称 |
EMBEDDED NOBLE METAL ELECTRODES IN MICROFLUIDICS |
摘要 |
A technique relates to manufacturing a nanogap. An oxide layer is disposed on top of a substrate. A release layer is disposed in a pattern on top of the oxide layer. A patterned trench is etched into the oxide layer using the pattern of the release layer. A metal layer is disposed on the release layer and in the patterned trench. A polish removes the release layer, thereby removing both the release layer and a portion of the metal layer having been disposed on top of the release layer, such that the metal layer remaining includes a first metal part and a second metal part connected by a metal nanowire. The metal layer remaining is coplanar with the oxide layer. A nanochannel is formed in the oxide layer in a region of the metal nanowire. The nanogap is formed in the metal nanowire separating the first and second metal parts. |
申请公布号 |
US2017122903(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201514928596 |
申请日期 |
2015.10.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Hu Huan;Lofaro Michael F.;Smith Joshua T.;Wunsch Benjamin H.;Solis Daniel J. |
分类号 |
G01N27/447;B01L3/00 |
主分类号 |
G01N27/447 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Armonk NY US |