发明名称 EMBEDDED NOBLE METAL ELECTRODES IN MICROFLUIDICS
摘要 A technique relates to manufacturing a nanogap. An oxide layer is disposed on top of a substrate. A release layer is disposed in a pattern on top of the oxide layer. A patterned trench is etched into the oxide layer using the pattern of the release layer. A metal layer is disposed on the release layer and in the patterned trench. A polish removes the release layer, thereby removing both the release layer and a portion of the metal layer having been disposed on top of the release layer, such that the metal layer remaining includes a first metal part and a second metal part connected by a metal nanowire. The metal layer remaining is coplanar with the oxide layer. A nanochannel is formed in the oxide layer in a region of the metal nanowire. The nanogap is formed in the metal nanowire separating the first and second metal parts.
申请公布号 US2017122903(A1) 申请公布日期 2017.05.04
申请号 US201514928596 申请日期 2015.10.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Hu Huan;Lofaro Michael F.;Smith Joshua T.;Wunsch Benjamin H.;Solis Daniel J.
分类号 G01N27/447;B01L3/00 主分类号 G01N27/447
代理机构 代理人
主权项
地址 Armonk NY US