SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD

摘要

When a SiC substrate (40) after performing mechanical treatment is heat-treated under SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, when latent scratches or the like exist in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment and the like are performed. This can manufacture high-quality SiC substrates.

主权项

1. A surface treatment method for treating a surface of a SiC substrate after performing a mechanical processing, the SiC substrate made of, at least in the surface thereof, single crystal SiC,
the method including a step of controlling the rate of etching of the SiC substrate by adjusting the inert gas pressure around the SiC substrate when the SiC substrate is heated under Si atmosphere and the SiC substrate is etched.