发明名称 |
METHOD FOR SEALING A CAVITY OF A MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE USING A SEAL LAYER COVERING OR LINING A HOLE IN FLUID COMMUNICATION WITH THE CAVITY |
摘要 |
A method for manufacturing a microelectromechanical systems (MEMS) device is provided. According to some embodiments of the method, a semiconductor structure is provided. The semiconductor structure includes an integrated circuit (IC) substrate, a dielectric layer arranged over the IC substrate, and a MEMS substrate arranged over the IC substrate and the dielectric layer to define a cavity between the MEMS substrate and the IC substrate. The MEMS substrate includes a MEMS hole in fluid communication with the cavity and extending through the MEMS substrate. A sealing layer is formed over or lining the MEMS hole to hermetically seal the cavity with a reference pressure while the semiconductor structure is arranged within a vacuum having the reference pressure. The semiconductor structure resulting from application of the method is also provided. |
申请公布号 |
US2017121174(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201715406915 |
申请日期 |
2017.01.16 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Hung Chia-Ming;Yu Shao-Chi;Chen Hsiang-Fu;Tai Wen-Chuan;Huang Hsin-Ting |
分类号 |
B81C1/00;B81B7/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:
providing a semiconductor structure including an integrated circuit (IC) substrate and a dielectric layer over the IC substrate; performing a first etch into the dielectric layer to form a cavity in the dielectric layer; bonding a MEMS substrate to the IC substrate through the dielectric layer to seal the cavity between the MEMS substrate and the IC substrate; performing a second etch into the MEMS substrate to form a MEMS hole in fluid communication with the cavity and extending through the MEMS substrate; and forming a sealing layer over or lining the MEMS hole to hermetically seal the cavity with a reference pressure while the semiconductor structure is arranged within a vacuum having the reference pressure. |
地址 |
Hsin-Chu TW |