发明名称 METHOD FOR SEALING A CAVITY OF A MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE USING A SEAL LAYER COVERING OR LINING A HOLE IN FLUID COMMUNICATION WITH THE CAVITY
摘要 A method for manufacturing a microelectromechanical systems (MEMS) device is provided. According to some embodiments of the method, a semiconductor structure is provided. The semiconductor structure includes an integrated circuit (IC) substrate, a dielectric layer arranged over the IC substrate, and a MEMS substrate arranged over the IC substrate and the dielectric layer to define a cavity between the MEMS substrate and the IC substrate. The MEMS substrate includes a MEMS hole in fluid communication with the cavity and extending through the MEMS substrate. A sealing layer is formed over or lining the MEMS hole to hermetically seal the cavity with a reference pressure while the semiconductor structure is arranged within a vacuum having the reference pressure. The semiconductor structure resulting from application of the method is also provided.
申请公布号 US2017121174(A1) 申请公布日期 2017.05.04
申请号 US201715406915 申请日期 2017.01.16
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Hung Chia-Ming;Yu Shao-Chi;Chen Hsiang-Fu;Tai Wen-Chuan;Huang Hsin-Ting
分类号 B81C1/00;B81B7/00 主分类号 B81C1/00
代理机构 代理人
主权项 1. A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising: providing a semiconductor structure including an integrated circuit (IC) substrate and a dielectric layer over the IC substrate; performing a first etch into the dielectric layer to form a cavity in the dielectric layer; bonding a MEMS substrate to the IC substrate through the dielectric layer to seal the cavity between the MEMS substrate and the IC substrate; performing a second etch into the MEMS substrate to form a MEMS hole in fluid communication with the cavity and extending through the MEMS substrate; and forming a sealing layer over or lining the MEMS hole to hermetically seal the cavity with a reference pressure while the semiconductor structure is arranged within a vacuum having the reference pressure.
地址 Hsin-Chu TW