Interband Cascade Light Emitting Devices

摘要

An interband cascade (IC) light emitting device comprising a plurality of interband cascade stages, wherein at least one of the IC stages is constructed to have an electron injector made of one or more QWs, a type-I quantum well (QW) active region, a barrier layer positioned between the active region and the electron injector, a hole injector made of one or more QWs, and a barrier layer positioned between the active region and the hole injector. In at least one embodiment, a type II heterointerface layer is between the electron injector and an adjacent hole injector. The well layer of the type-I QW active region has compressive strain, while the barrier layers which flank the type-I QW active region comprise tensile strain layers. In certain embodiments, the electron injector and the hole injector comprise tensile strained layers.

主权项

1. A semiconductor light emitting device comprising:
a plurality of interband cascade (IC) stages, wherein each IC stage comprises:
an electron injector comprising a first quantum well and a first barrier layer, wherein the first barrier layer comprises a first tensile-strained semiconductor material free of a quinary aluminum gallium indium arsenic antimony (AlGaInAsSb) semiconductor material;a first hole injector comprising a second quantum well and a second barrier layer, wherein the second barrier layer comprises a second tensile-strained semiconductor material free of a quinary AlGaInAsSb semiconductor material; andan active region positioned between the first barrier layer and the second barrier layer and comprising a type-I quantum well,wherein the type-I quantum well comprises a well layer having compressive strain and is configured to emit photons based on interband transitions, andwherein the electron injector is coupled to a second hole injector of an adjacent IC stage through a type-II heterointerface.