发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SURFACE TREATMENT AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD |
摘要 |
A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700° C. |
申请公布号 |
US2017125418(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201715407598 |
申请日期 |
2017.01.17 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
PARK JAEYOUNG;KANG SUNGHO;KIM KICHUL;LEE Sunyoung;LEE HAN KI;KOO BONYOUNG |
分类号 |
H01L27/088;H01L29/06;H01L29/08;H01L21/306;H01L21/3205;H01L21/762;H01L21/02;H01L29/66;H01L29/45;H01L21/768;H01L29/34;H01L21/8234 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |