Wide Bandgap Junction Barrier Schottky Diode With Silicon Bypass

摘要

A silicon surge bypass diode is co-packaged with a high bandgap junction barrier Schottky diode. The co-packaged diodes may be used in a power circuits such as power factor correction circuits, converters, inverters circuit, motor drives, and protection circuits, for example. The high bandgap diode may be made of silicon carbide, gallium nitride, aluminum nitride, aluminum gallium nitride, and/or diamond, for example. The high bandgap diode may be formed by diode connecting a transistor, such as a high-electron-mobility transistor (HEMT). The high bandgap diode may be much smaller than the silicon diode. The package may have a common terminal for the diode cathodes, and separate terminals for the anodes of each diode.

主权项

1. A device, comprising:
a junction barrier Schottky (JBS) diode made from a wide bandgap material a silicon diode; and a common package comprising a first terminal and a second terminal, where:
the JBS diode and the silicon diode are mounted in the common package;the first terminal is connected to the anode of the JBS diode;the second terminal is connected to the anode of the silicon diode; and the first and second terminals are separate.