FLUIDIC DEVICE INCLUDING BAW RESONATORS ALONG OPPOSING CHANNEL SURFACES

摘要

Multiple bulk acoustic wave (BAW) resonator structures are arranged along opposing surfaces of a fluidic passage arranged to receive a fluid. At least one resonator structure may be overlaid with functionalization (e.g., specific binding or non-specific binding) material to bind one or more analytes contained in the fluid. Combinations of BAW resonators providing dominant shear response for detection, and providing dominant longitudinal response for mixing or analyte movement, may be provided on one or more surfaces bounding a fluidic passage. Embodiments may reduce the footprint of multi-resonator fluidic device, enhance analyte binding rate, and/or enhance mixing of sample constituents.

主权项

1. A fluidic device comprising:
a channel arranged to receive a fluid; a first bulk acoustic wave resonator structure arranged between a first substrate and a first surface bounding the channel, wherein the first bulk acoustic wave resonator structure includes a first piezoelectric material, a first distal electrode arranged between the first piezoelectric material and the first substrate, and a first proximal electrode arranged between the first piezoelectric material and the channel, wherein at least a portion of the first piezoelectric material is arranged between the first distal electrode and the first proximal electrode to form a first active region; and a second bulk acoustic wave resonator structure arranged between a second substrate and a second surface bounding the channel, wherein the second surface opposes the first surface, and wherein the second bulk acoustic wave resonator structure includes a second piezoelectric material, a second distal electrode arranged between the second piezoelectric material and the second substrate, and a second proximal electrode arranged between the second piezoelectric material and the channel, wherein at least a portion of the second piezoelectric material is arranged between the second distal electrode and the second proximal electrode to form a second active region.