Method of Manufacturing a Magnetoresistive Stack/ Structure using Plurality of Encapsulation Layers

摘要

A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching the first encapsulation layer which is disposed over the exposed surface of the dielectric layer. The method further includes (a) depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer and (b) depositing a third encapsulation layer: (i) on the second encapsulation layer which is on the first encapsulation layer and the exposed surface of the dielectric layer. The method also includes etching the remaining layers of the stack/structure (via one or more etch processes).

主权项

1. A method of manufacturing a magnetoresistive stack/structure from: (i) a first magnetic region including one or more layers of magnetic material, (ii) a dielectric layer disposed over the first magnetic region, (iii) a second magnetic region including one or more layers of magnetic material, wherein the second magnetic region is disposed over the dielectric layer, method comprising:
etching through the second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of the dielectric layer; depositing a first encapsulation layer on or over the sidewalls of the second magnetic region and on the exposed surface of the dielectric layer, wherein the first encapsulation layer is a first material; depositing a second encapsulation layer on the first encapsulation layer which is (i) on or over the sidewalls of the second magnetic region and (ii) on the exposed surface of the dielectric layer, wherein the second encapsulation layer is a second material; etching (i) the first encapsulation layer and the second encapsulation layer which are disposed on or over the exposed surface of the dielectric layer, wherein, after etching the first encapsulation layer and the second encapsulation layer, a portion of the first encapsulation layer and a portion of the second encapsulation layer remain on or over the sidewalls of the second magnetic region; etching through the exposed surface of dielectric layer to form a tunnel barrier and provide sidewalls thereof; and after etching through the exposed surface of dielectric layer, etching the first magnetic region to provide sidewalls thereof.