STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE

摘要

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a gate dielectric layer, a work function layer, and a conductive filling over the work function layer. The semiconductor device structure also includes a dielectric layer covering the fin structure. The dielectric layer is in direct contact with the conductive filling.

主权项

1. A semiconductor device structure, comprising:
a fin structure over a semiconductor substrate; a shallow trench isolation (STI) adjacent the fin structure; a gate stack covering a portion of the fin structure, wherein the gate stack comprises a gate dielectric layer, a work function layer, and a conductive filling over the work function layer, wherein the conductive filling covers a side edge of the work function layer; and a dielectric layer covering the fin structure, wherein the conductive filling is separated from the dielectric layer by the gate dielectric layer along a sidewall of the dielectric layer, wherein the work function layer terminates over the STI between the fin structure and the dielectric layer.