INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING THE SAME

摘要

An integrated circuit structure with a back side through silicon via (B/S TSV) therein and a method of forming the same is disclosed. The method includes the steps of: receiving a wafer comprising a substrate having a front side that has a conductor thereon and a back side; forming a back side through silicon via (B/S TSV) from the back side of the substrate to penetrate the substrate; and filling the back side through silicon via (B/S TSV) with a conductive material to form an electrical connection with the conductor. Thus a back side through silicon via penetrates the back side of the substrate and electrically connects to the conductor on the front side of the substrate is formed.

主权项

1. A method of forming an integrated circuit structure, the method comprising:
receiving a substrate having a front side that comprises a conductor thereon and a back side; thinning down the substrate from the back side of the substrate; forming a first photo resist mask to etch a first via hole from the back side of the substrate without exposing the conductor; forming a side wall film on a side wall of the first via hole without covering a bottom of the first via hole; forming a second photo resist mask to etch through the bottom of the first via hole to form a second via hole, which has a size smaller than a size of the first via hole, to expose the conductor; and filling the first and second via holes with a conductive material to be electrically connected to the conductor.