发明名称 SOLID STATE STORAGE DEVICE AND READING CONTROL METHOD THEREOF
摘要 A reading control method for a solid state storage device includes following steps. While the solid state storage device is in an idle mode, a background monitoring operation is performed on the first block and the second block. Consequently, a first optimal read voltage set corresponding to the first block and a second optimal read voltage set corresponding to the second block are acquired. In reading operation, a default read voltage set is provided to the non-volatile memory to read a data of the first block. If a data of the first block is not successfully decoded, a read retry process is performed on the first block and the first optimal read voltage set is provided to the non-volatile memory to read the data of the first block.
申请公布号 US2017125090(A1) 申请公布日期 2017.05.04
申请号 US201615013023 申请日期 2016.02.02
申请人 Lite-On Electronics (Guangzhou) Limited ;LITE-ON TECHNOLOGY CORPORATION 发明人 Zeng Shih-Jia;Fu Jen-Chien
分类号 G11C11/56;G11C29/52;G11C16/26;G06F11/10 主分类号 G11C11/56
代理机构 代理人
主权项 1. A reading control method for a solid state storage device, the solid state storage device comprising a non-volatile memory with plural blocks, the plural blocks comprising a first block and a second block, the reading control method comprising steps of: performing a background monitoring operation on the first block and the second block while the solid state storage device is in an idle mode, wherein a first optimal read voltage set corresponding to the first block and a second optimal read voltage set corresponding to the second block are acquired; providing a default read voltage set to the non-volatile memory to read a data of the first block, and judging whether the data of the first block is successfully decoded; and if the data of the first block is not successfully decoded, performing a read retry process on the first block and providing the first optimal read voltage set to the non-volatile memory to read the data of the first block.
地址 GUANGZHOU CN