发明名称 CROSS WAVEGUIDE
摘要 A cross waveguide includes a first waveguide and a second waveguide, where the first waveguide and the second waveguide are mutually perpendicular and crosswise disposed, an area formed by a cross part of the first waveguide and the second waveguide is a cross area, the first waveguide and the second waveguide each include a shallow etching part and a core layer, and the shallow etching part is symmetrically distributed on two sides of the core layer in a length direction relative to an axis of the core layer. By appropriately adjusting a width of the core layer or a width of the shallow etching part, an energy loss generated during optical wave transmission in the cross waveguide can be effectively reduced.
申请公布号 US2017123155(A1) 申请公布日期 2017.05.04
申请号 US201715406182 申请日期 2017.01.13
申请人 Huawei Technologies Co., Ltd. 发明人 Liu Wanyuan;Tu Xin;Fu Hongyan
分类号 G02B6/125;G02B6/136;G02B6/122 主分类号 G02B6/125
代理机构 代理人
主权项 1. A cross waveguide, comprising: a first waveguide and a second waveguide, wherein: the first waveguide and the second waveguide are mutually perpendicular and crosswise disposed, and an area formed by a cross part of the first waveguide and the second waveguide is a cross area;the first waveguide and the second waveguide each comprise a shallow etching part and a core layer, and the shallow etching part is symmetrically distributed on two sides of the core layer in a length direction relative to an axis of the core layer;one end of the first waveguide is a first input waveguide, the other end is a first output waveguide, one end of the second waveguide is a second input waveguide, and the other end is a second output waveguide;the core layer in the first input waveguide is disposed to have an equal width, and distances between outer sides of the shallow etching part in the first input waveguide are equal;the core layer in the second input waveguide is disposed to have an equal width, and distances between outer sides of the shallow etching part in the second input waveguide are equal; andthe core layer at one end of the first output waveguide and close to the cross area is narrower than the core layer in the first input waveguide, and the core layer at the other end in the first output waveguide is the same as the core layer in the first input waveguide in terms of width, distances between outer sides of the shallow etching part in the first output waveguide are equal, and the core layer at one end in the second output waveguide and close to the cross area is narrower than the core layer in the second input waveguide, and the core layer at the other end in the second output waveguide is the same as the core layer in the second input waveguide in terms of width, and distances between outer sides of the shallow etching part in the second output waveguide are equal; ora distance between outer sides of the shallow etching part at one end in the first output waveguide and close to the cross area is less than the distance between the outer sides of the shallow etching part in the first input waveguide, a distance between outer sides of the shallow etching part at the other end in the first output waveguide is the same as the distance between the outer sides of the shallow etching part in the first input waveguide, a distance between outer sides of the shallow etching part at one end in the second output waveguide and close to the cross area is less than the distance between the outer sides of the shallow etching part in the second input waveguide, and a distance between outer sides of the shallow etching part at the other end in the second output waveguide is the same as the distance between the outer sides of the shallow etching part in the second input waveguide.
地址 Shenzhen CN