发明名称 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK
摘要 A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I).;
申请公布号 US2017121437(A1) 申请公布日期 2017.05.04
申请号 US201715405527 申请日期 2017.01.13
申请人 FUJIFILM Corporation 发明人 TSUCHIMURA Tomotaka
分类号 C08F212/14;C08F220/68;C08F220/18;G03F7/004;G03F7/038;G03F7/38;G03F7/32;G03F7/40;G03F7/039;G03F7/20;G03F7/16 主分类号 C08F212/14
代理机构 代理人
主权项 1. A pattern forming method comprising: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the film with active light or radiation; and developing the exposed film using a developer including an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by the following General Formula (I), in General Formula (I), Ar1 represents an aromatic ring group or an alicyclic group, R1 and R2 each independently represent an alkyl group, a cycloalkyl group, or an aryl group, X represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an acyl group, and n represents an integer of 1 or more.
地址 Tokyo JP