发明名称 |
INTEGRATED MEMS-CMOS DEVICES AND INTEGRATED CIRCUITS WITH MEMS DEVICES AND CMOS DEVICES |
摘要 |
Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located in and/or over the first side of the substrate. Also, the exemplary vertically integrated MEMS-CMOS device includes a MEMS device located in and/or under the second side of the substrate. |
申请公布号 |
US2017121172(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201715405911 |
申请日期 |
2017.01.13 |
申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
Xia Jia Jie;Ranganathan Nagarajan;Kumar Rakesh;Chatterjee Aveek Nath |
分类号 |
B81B7/00;B81C1/00 |
主分类号 |
B81B7/00 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit comprising:
a semiconductor substrate having a first side and an opposite second side; an interconnect extending through the first side of a semiconductor substrate; a dielectric layer overlying the first side of the semiconductor substrate; a CMOS device in or on the dielectric layer overlying the first side of the semiconductor substrate; a first conductive structure in the dielectric layer and in electrical contact with the interconnect; and a MEMS device under or on the second side of the semiconductor substrate and in electrical connection with the interconnect. |
地址 |
Singapore SG |