发明名称 INTEGRATED MEMS-CMOS DEVICES AND INTEGRATED CIRCUITS WITH MEMS DEVICES AND CMOS DEVICES
摘要 Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located in and/or over the first side of the substrate. Also, the exemplary vertically integrated MEMS-CMOS device includes a MEMS device located in and/or under the second side of the substrate.
申请公布号 US2017121172(A1) 申请公布日期 2017.05.04
申请号 US201715405911 申请日期 2017.01.13
申请人 GLOBALFOUNDRIES Singapore Pte. Ltd. 发明人 Xia Jia Jie;Ranganathan Nagarajan;Kumar Rakesh;Chatterjee Aveek Nath
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. An integrated circuit comprising: a semiconductor substrate having a first side and an opposite second side; an interconnect extending through the first side of a semiconductor substrate; a dielectric layer overlying the first side of the semiconductor substrate; a CMOS device in or on the dielectric layer overlying the first side of the semiconductor substrate; a first conductive structure in the dielectric layer and in electrical contact with the interconnect; and a MEMS device under or on the second side of the semiconductor substrate and in electrical connection with the interconnect.
地址 Singapore SG