| 发明名称 |
GERMANIUM TIN CHANNEL TRANSISTORS |
| 摘要 |
Techniques related to transistors and integrated circuits having germanium tin, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include a channel region that comprises a germanium tin portion of a fin such that the fin includes a buffer layer disposed over a substrate and the germanium tin portion disposed over the buffer layer. |
| 申请公布号 |
US2017125527(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201415121745 |
申请日期 |
2014.03.27 |
| 申请人 |
Intel Corporation |
发明人 |
Pillarisetty Ravi;Le Van H.;Rachmady Willy;Kotlyar Roza;Radosavljevic Marko;Then Han Wui;Dasgupta Sansaptak;Dewey Gilbert;Chu-Kung Benjamin;Kavalieros Jack T. |
| 分类号 |
H01L29/161;H01L29/165;H01L27/092;H01L21/8238;H01L27/11;H01L29/66;H01L21/8234;H01L29/78;H01L27/088 |
主分类号 |
H01L29/161 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
Santa Clara CA US |
