BACK-ILLUMINATED TYPE SOLID-STATE IMAGING DEVICE

摘要

A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk.;The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16, and 19 that constitute the pixel is formed in the semiconductor film 33, and a rear surface electrode 51 to which a voltage is applied is formed on the rear surface side of the semiconductor substrate 31.

主权项

1. A back-illuminated type solid-state imaging device comprising:
a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; a photoelectric conversion element that constitutes a pixel in said semiconductor substrate, the photoelectric conversion element including a charge accumulation portion, the charge accumulation portion includes a plurality of impurity regions and a high impurity region formed directly between the plurality of impurity regions; at least part of transistors that constitute said pixel are included in said semiconductor film; and a rear surface electrode on the rear surface side of said semiconductor substrate to which a negative voltage is applied, the rear surface electrode being transparent, wherein, a semiconductor layer of an opposite conduction type to the charge accumulation portion of said photoelectric conversion element is formed in a portion of the semiconductor substrate under said insulation film, and a semiconductor layer of an opposite conduction type to a charge accumulation portion of said photoelectric conversion element is formed in the semiconductor substrate under said insulation film.