METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device which can reduce leakage of current between wirings. Included steps are forming a first insulator over a first conductor which is formed over substrate; forming a first hard mask thereover; forming a first resist mask comprising a first opening, over the first hard mask; etching the first hard mask to form a second hard mask comprising a second opening; etching the first insulator using the second hard mask to form a second insulator comprising a third opening; forming a second conductor embedded in the second opening and the third opening; performing polishing treatment on the second hard mask and the second conductor to form a third conductor embedded in the third opening; forming a fourth conductor thereover; forming a second resist mask in a pattern over the fourth conductor; and dry-etching the fourth conductor to form a fifth conductor. The second hard mask can be dry-etched.

主权项

1. A method for manufacturing a semiconductor device comprising a semiconductor film over a substrate, comprising the steps of:
forming a first conductive film over the substrate; forming a first insulating film over the first conductive film; forming a first hard mask over the first insulating film; forming a first resist mask comprising a first opening, over the first hard mask; etching the first hard mask using the first resist mask to form a second hard mask comprising a second opening; etching the first insulating film using the second hard mask to form a second insulating film comprising a third opening; forming a second conductive film embedded in the second opening and the third opening; performing polishing treatment on the second hard mask and the second conductive film to form a third conductive film embedded in the third opening; forming a fourth conductive film over the second insulating film and the third conductive film; forming a second resist mask in a pattern over the fourth conductive film; etching the fourth conductive film using the second resist mask and an etching gas to form a fifth conductive film; and removing the second resist mask, wherein the second hard mask is etched with the etching gas.