Thin Film Transistor, Array Substrate and Method of Forming the Same

摘要

The present disclosure proposes a TFT. The source and the drain of the TFT are disposed on the same side as the gate. The gate includes a first buffer layer, a first copper layer, a second copper layer and a second buffer layer that are stacked from bottom to top, and the second buffer layer is disposed on the side that is close to the source and drain. The source and drain include a first buffer layer, a first copper layer, a second copper layer and a second buffer layer that are stacked, and the first buffer layer is disposed on the side that is close to the gate. The first copper layer is deposited by a first power, the second copper layer is deposited by a second power lower than the first power. Through the above method, it is prevents photoresist from shedding when etching.

主权项

1. An array substrate, comprising a substrate and a plurality of thin film transistors (TFT) installed on the substrate, with the TFTs comprising a gate, a source and a drain, the source and the drain being disposed on the same side as the gate; wherein
the gate comprises a first buffer layer, a first copper layer, a second copper layer and a second buffer layer that are stacked from bottom to top, and the second buffer layer is disposed on the side that is close to the source and drain; and/or the source and drain comprises a first buffer layer, a first copper layer, a second copper layer and a second buffer layer that are stacked from bottom to top, and the first buffer layer is disposed on the side that is close to the gate; the first copper layer is deposited by a first power, the second copper layer is deposited by a second power, with the first power higher than the second power, wherein the first power is between 50 KW and 70 KW, and the second power is between 20 KW and 40 KW.