| 发明名称 |
BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, a base disposed on the first well region and having the first conductive type, an emitter disposed on the first well region and having the second conductive type, and a collector disposed on the second well region and having the second conductive type. The first well region comprises a first impurity region and a second impurity region having an impurity concentration lower than that of the first impurity region. The base is disposed on the first impurity region, and the emitter is disposed on the second impurity region. |
| 申请公布号 |
US2017125401(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615335877 |
申请日期 |
2016.10.27 |
| 申请人 |
Dongbu Hitek Co., Ltd. |
发明人 |
Gu Sung Mo;Ahn Sung Bok |
| 分类号 |
H01L27/06;H01L21/8249;H01L29/66;H01L21/266;H01L29/36;H01L29/732 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bipolar junction transistor comprising:
a first well region having a first conductive type; a second well region disposed adjacent to the first well region and having a second conductive type; a base disposed on the first well region and having the first conductive type; an emitter disposed on the first well region and having the second conductive type; and a collector disposed on the second well region and having the second conductive type, wherein the first well region comprises a first impurity region, an impurity concentration of the second impurity region is lower than an impurity concentration of the first impurity region, the base is disposed on the first impurity region, and the emitter is disposed on the second impurity region. |
| 地址 |
Seoul KR |
