WAFER DEBONDING USING MID-WAVELENGTH INFRARED RADIATION ABLATION

摘要

Structures and methods are provided for temporarily bonding handler wafers to device wafers using bonding structures that include one or more releasable layers which are laser-ablatable using mid-wavelength infrared radiation

主权项

1. An apparatus for processing a stack structure comprising a device wafer, a handler wafer, and a bonding structure disposed between the device wafer and the handler wafer, wherein the bonding structure bonds the device wafer and handler wafer together, wherein the bonding structure comprises a release layer formed of conductive material, the apparatus comprising:
a vacuum system comprising a first vacuum chuck and a second vacuum chuck; and an infrared laser scan system; wherein the vacuum system is configured to apply a vacuum suction force through the first vacuum chuck to hold the stack structure in place with the device wafer in contact to the first vacuum chuck; wherein the infrared laser scan system is configured to apply a pulsed infrared laser beam at the backside of the handler wafer to irradiate the release layer with infrared energy having a wavelength in a range of about 1.12 μm to about 5 μm, and substantially or completely vaporize the release layer by infrared laser ablation, and thereby cause the release of the device wafer from the handler wafer as a direct result of the infrared laser ablation of the release layer; and wherein the vacuum system is configured to place the second vacuum chuck in contact with the handler wafer following infrared ablation of the bonding structure, and apply a vacuum suction force through the second vacuum chuck to pull the handler wafer away from the device wafer.