SECONDARY ELECTRON GENERATING COMPOSITION

摘要

The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

主权项

1. A secondary electron generating (SEG) composition comprising:
(i) a secondary electron generator comprising a compound having an effective atomic number (Zeff) greater than or equal to 30 (optionally where Zeff excludes any solvates having a boiling point less than or equal to 150° C. at 100 kPa pressure); and (ii) a base componentwherein the effective atomic number (Zeff) is calculated as:
Zeff=ΣαiZi where Zi is the atomic number of the ith element in the compound, and αi is the fraction of the sum total of the atomic numbers of all atoms in the compound constituted by said ith element.