发明名称 System and Method for Dual-Region Singulation
摘要 A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.
申请公布号 US2017125315(A1) 申请公布日期 2017.05.04
申请号 US201715403673 申请日期 2017.01.11
申请人 Infineon Technologies Austria AG 发明人 Wood Andrew Christopher Graeme;Fasching Gernot;Bodea Marius Aurel;Ostermann Thomas Krotscheck;Bacher Erwin
分类号 H01L21/66;G06F17/50;H01L23/58;H01L21/78;H01L23/482;H01L23/485 主分类号 H01L21/66
代理机构 代理人
主权项 1. A semiconductor die comprising: a semiconductor circuit disposed within or over a substrate; a conductive contact pad disposed over the substrate outside the semiconductor circuit; and a floating electrical path ending at a singulated edge of the die, wherein the electrical path is electrically coupled to the conductive contact pad.
地址 Villach AT