发明名称 |
System and Method for Dual-Region Singulation |
摘要 |
A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad. |
申请公布号 |
US2017125315(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201715403673 |
申请日期 |
2017.01.11 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Wood Andrew Christopher Graeme;Fasching Gernot;Bodea Marius Aurel;Ostermann Thomas Krotscheck;Bacher Erwin |
分类号 |
H01L21/66;G06F17/50;H01L23/58;H01L21/78;H01L23/482;H01L23/485 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor die comprising:
a semiconductor circuit disposed within or over a substrate; a conductive contact pad disposed over the substrate outside the semiconductor circuit; and a floating electrical path ending at a singulated edge of the die, wherein the electrical path is electrically coupled to the conductive contact pad. |
地址 |
Villach AT |