NOVEL AMINO-SILYL AMINE COMPOUND AND THE MANUFACTURING METHOD OF DIELECTRIC FILM CONTAINING Si-N BOND BY USING ATOMIC LAYER DEPOSITION

摘要

Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

主权项

1. An amino-silyl amine compound represented by the following Chemical Formula 1: [In Chemical Formula 1,R1 to R4 are each independently hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, (C2-C3)alkynyl, (C3-C7)cycloalkyl, or (C6-C12) aryl.]