| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes: a substrate having a first fin-shaped structure and a second fin-shaped structure thereon, a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure, a gate isolation directly on the second fin-shaped structure, and a gate line on the STI and the first fin-shaped structure. Preferably, the gate line includes a L-shaped structure. |
| 申请公布号 |
US2017125579(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201715399755 |
申请日期 |
2017.01.06 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Chien-Ting |
| 分类号 |
H01L29/78;H01L29/423;H01L29/66;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure; and a gate line on the STI and adjacent to the fin-shaped structure, wherein the gate line comprises a L-shaped structure. |
| 地址 |
Hsinchu City TW |
