TRENCH SILICIDE CONTACTS WITH HIGH SELECTIVITY PROCESS

摘要

A method for forming self-aligned contacts includes patterning a mask between fin regions of a semiconductor device, etching a cut region through a first dielectric layer between the fin regions down to a substrate and filling the cut region with a first material, which is selectively etchable relative to the first dielectric layer. The first dielectric layer is isotropically etched to reveal source and drain regions in the fin regions to form trenches in the first material where the source and drain regions are accessible. The isotropic etching is super selective to remove the first dielectric layer relative to the first material and relative to gate structures disposed between the source and drain regions. Metal is deposited in the trenches to form silicide contacts to the source and drain regions.

主权项

1. A method for forming self-aligned contacts, comprising:
patterning a mask above fin regions of a semiconductor device; etching a cut region through a first dielectric layer between the fin regions down to a substrate; filling the cut region with a first material, which is selectively etchable relative to the first dielectric layer; isotropic etching the first dielectric layer to reveal source and drain regions in the fin regions to form trenches in the first material where the source and drain regions are exposed, the isotropic etching being super selective to remove the first dielectric layer relative to the first material and relative to gate structures disposed between the source and drain regions; and depositing metal in the trenches to form silicide contacts to the source and drain regions.