发明名称 |
FINFET GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device includes a n-type gate structure over a first semiconductor fin, in which the n-type gate structure is fluorine incorporated and includes a n-type work function metal layer overlying the first high-k dielectric layer. The n-type work function metal layer includes a TiAl (titanium aluminum) alloy, in which an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3. The semiconductor device further includes a p-type gate structure over a second semiconductor fin, in which the p-type gate structure is fluorine incorporated includes a p-type work function metal layer overlying the second high-k dielectric layer. The p-type work function metal layer includes titanium nitride (TiN), in which an atom ratio of Ti to N (nitrogen) is in a range substantially from 1:0.9 to 1:1.1. |
申请公布号 |
US2017125298(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201615382478 |
申请日期 |
2016.12.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
JANGJIAN Shiu-Ko;YU Ren-Hau;JENG Chi-Cherng |
分类号 |
H01L21/8234;H01L29/49;H01L21/285;H01L27/092 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a first semiconductor fin on the semiconductor substrate; and a n-type gate structure over the first semiconductor fin, wherein the n-type gate structure is fluorine incorporated and comprises:
a first initial layer over the first semiconductor fin;a first high-k dielectric layer over the first initial layer and enclosed by a first gate spacer;a n-type work function metal layer overlying the first high-k dielectric layer, the n-type work function metal layer comprising TiAl (titanium aluminum) alloy or TaAl (tantalum aluminum) alloy, wherein an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3 when the n-type work function metal layer comprises the TiAl alloy;a first blocking metal layer overlying the n-type work function metal layer; and
a first metal filler peripherally enclosed by the first blocking metal layer, such that the first metal filler is enclosed by a first stacked structure, wherein a side wall of the first stacked structure contains a fluorine concentration substantially from 5 atom percent (at %) to 20 at %, and a bottom of the first stacked structure contains a fluorine concentration substantially from 1 at % to 15 at %. |
地址 |
Hsinchu TW |