| 发明名称 |
Schottky diode logic for E-mode FET/D-mode FET VLSI circuits |
| 摘要 |
A digital logic circuit using Schottky diodes as the nonlinear logic element, a single power supply and an E-mode MESFET as an inverter in the open drain configuration. Temperature compensation of the threshold voltage of the E-mode FET is provided. The circuit is particularly suited for use with a GaAs substrate.
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| 申请公布号 |
US4798979(A) |
申请公布日期 |
1989.01.17 |
| 申请号 |
US19860910545 |
申请日期 |
1986.09.23 |
| 申请人 |
HONEYWELL INC. |
发明人 |
LEE, GARY M.;PECZALSKI, ANDRZEJ |
| 分类号 |
H03K19/0944;H03K19/003;H03K19/0952;H03K19/0956;(IPC1-7):H03K19/017;H03K17/04;H03K19/094;H03K19/20 |
主分类号 |
H03K19/0944 |
| 代理机构 |
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