| 摘要 |
PURPOSE:To decrease the densities of electrons and holes in a III-V compound semiconductor and to increase the resistance thereof, by adding a boron source gas in an atmospheric gas, before the III-V compound semiconductor is formed from the atmospheric gas by a vapor growth method. CONSTITUTION:When a layer consisting of aluminum, gallium and arsenic is formed on a gallium arsenide substrate by a vapor growth method, trimethylgallium, trimethylaluminum and arsine are used as raw material gases. Hydrogen gas is used as a carrier gas. Diborane is added to these gases as a boron source gas, and an atmospheric gas is provided. The gas is introduced on a GaAs substrate, which is heated to 650 deg.C. Thus an AlGaAs layer is formed on a GaAs substrate. Said AlGaAs layer includes boron, and indication of high resistance is confirmed.
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