| 摘要 |
PURPOSE:To relax the limitation of the thickness of a film in through-implantation, and to prevent the lowering of carrier concentration and mobility by using an impurity element giving the same conductivity type as implanting ions to a semiconductor as the constituent element of the film for through-implantation. CONSTITUTION:A film 12 for through-implantation consisting of an impurity element to be operated as an N-type or a P-type to a semiconductor 1 is formed onto the main surface of a semiconductor 11, and an impurity element as the same conductivity type as said impurity element to the semiconductor 11 is permeated through said film 12 and the ions of the latter impurity element are implanted into the semiconductor 11. The film 12 for through-implantation composed of the impurity element such as Si, Mg, C or the like as the N-type or the P-type is shaped onto the semiconductor substrate 11 made up of GaAs, InP, InGaAsP, etc., and a mask 13 consisting of a photo-resist, etc., is patterned onto the film 12 and shaped. Implanting ions 14 as the same conductivity type as the constituent element of the film 12 to the semiconductor substrate 11 are permeated through the film 12 through an opening section 13a in the mask 13, and implanted to the semiconductor substrate 12, thus forming an implanting region 15.
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