| 摘要 |
PURPOSE:To execute excellent etching working forming a superior shape with excellent reproducibility in an etching process at the time of the manufacture of a semiconductor device, particularly, a trench etching process, by exposing the surface of silicon carbide conducting with an electrode to one part of an insulator coating the surface of the electrode on which an article to be etched is placed. CONSTITUTION:An article to be etched 4 is placed onto one of a pair of counter high-frequency power applying electrodes 2, 3 arranged into a reaction vessel 6 capable of being evacuated, and the article to be etched 4 is etched by reactive gas plasma. In such an etching device, the surface of silicon carbide 7 conducting with the electrode 3 on which the article to be etched 4 is placed is exposed to one part of an insulator 51 coating the surface of the electrode except a base section in the electrode 3. Consequently, since the surface of silicon carbide 7 conducts with plasma in a DC manner, the surfaces of the insulator 8 coating the electrode 3 and a formed deposit are made difficult to be charged, thus generating no abnormal discharge by break down, etc. Accordingly, self-bias voltage is not fluctuated, thus acquiring an etching result forming an excellent shape high superior reproducibility.
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