Method for production of transparent conductive film

摘要

A method for producing a transparent conductive film includes heat-treating a transparent conductive film comprising a transparent film substrate and a transparent conductive laminate including a first transparent conductive layer and a second transparent conductive layer, so that the first and the second transparent conductive layers in the transparent conductive film are crystallized, wherein the first transparent conductive layer is a first amorphous layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, the second transparent conductive layer is a second amorphous layer comprising an indium-based complex oxide having a tetravalent metal element oxide, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%).

主权项

1. A method for producing a transparent conductive film, comprising:
heat-treating a transparent conductive film comprising a transparent film substrate and a transparent conductive laminate having a total thickness of 35 nm or less that is provided on at least one surface of the transparent film substrate and comprises a first transparent conductive layer and a second transparent conductive layer, so that the first and the second transparent conductive layers in the transparent conductive film are crystallized, wherein the transparent film substrate is a transparent plastic film, the thickness of the first transparent conductive layer is smaller than the thickness of the second transparent conductive layer, a difference between the thickness of the first transparent conductive layer and the thickness of the second transparent conductive layer is 1 nm or more, the thickness of the first transparent conductive layer is 1 to 17 nm, and the thickness of the second transparent conductive layer is 9 to 34 nm, the first transparent conductive layer is a first amorphous layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, a first content of the tetravalent metal element oxide of the first transparent conductive layer is more than 0% by weight and not more than 5% by weight, the second transparent conductive layer is a second amorphous layer comprising an indium-based complex oxide having a tetravalent metal element oxide, and located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than the first content, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), wherein a heating temperature in the heat-treating is from 120° C. to 150° C., and a heating time in the heat-treating is less than 60 minutes, a first surface of the second transparent conductive layer directly contacting the substrate and the first transparent conductive layer directly contacting a second surface of the second transparent conductive layer opposite to the first surface.