发明名称 |
Photo-sensitive silicon package embedding self-powered electronic system |
摘要 |
A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device. |
申请公布号 |
US9640519(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201514737072 |
申请日期 |
2015.06.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Lopez Osvaldo Jorge;Schroen Walter Hans Paul;Noquil Jonathan Almeria;Grebs Thomas Eugene;Molloy Simon John |
分类号 |
H01L25/16;H01L31/028;H01L31/042;H01L31/0216;H01L27/082;H01L27/088;H01L31/18;H01L31/02;H01L25/00;H01L23/053;H01L23/06;H01L23/13;H01L23/14;H01L21/50;H01L23/00;H01L25/18;H01L29/06;H01L23/498 |
主分类号 |
H01L25/16 |
代理机构 |
|
代理人 |
Keagy Rose Alyssa;Brill Charles A.;Cimino Frank D. |
主权项 |
1. A semiconductor device comprising:
an integrated circuit (IC) chip having a first side with terminals of the IC, an opposite second side, and a thickness; a slab of low-grade silicon (l-g-Si) having a first side lightly p-doped, covered by an insulating layer and configured as a ridge framing a depression including a recessed central area suitable to accommodate the chip, and the opposite second side heavily n-doped to form the pn-junction of a photovoltaic cell; the ridge having a first surface in a first plane, and the recessed central area having a second surface in a second plane spaced from the first plane by a depth at least equal to the chip thickness; the ridge covered by a metal layer configured as device terminals, and the central area covered by a metal layer configured as attachment pads for the IC terminals with one pad connected to a metal-filled deep-silicon via extending from the central area to the pn-junction; and the terminals of the chip attached to the pads of the central slab area so that the second chip side is co-planar with the device terminals on the slab ridge, whereby the slab serves as the package of the IC chip and the photovoltaic cell powers the IC. |
地址 |
Dallas TX US |