发明名称 Photo-sensitive silicon package embedding self-powered electronic system
摘要 A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.
申请公布号 US9640519(B2) 申请公布日期 2017.05.02
申请号 US201514737072 申请日期 2015.06.11
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 Lopez Osvaldo Jorge;Schroen Walter Hans Paul;Noquil Jonathan Almeria;Grebs Thomas Eugene;Molloy Simon John
分类号 H01L25/16;H01L31/028;H01L31/042;H01L31/0216;H01L27/082;H01L27/088;H01L31/18;H01L31/02;H01L25/00;H01L23/053;H01L23/06;H01L23/13;H01L23/14;H01L21/50;H01L23/00;H01L25/18;H01L29/06;H01L23/498 主分类号 H01L25/16
代理机构 代理人 Keagy Rose Alyssa;Brill Charles A.;Cimino Frank D.
主权项 1. A semiconductor device comprising: an integrated circuit (IC) chip having a first side with terminals of the IC, an opposite second side, and a thickness; a slab of low-grade silicon (l-g-Si) having a first side lightly p-doped, covered by an insulating layer and configured as a ridge framing a depression including a recessed central area suitable to accommodate the chip, and the opposite second side heavily n-doped to form the pn-junction of a photovoltaic cell; the ridge having a first surface in a first plane, and the recessed central area having a second surface in a second plane spaced from the first plane by a depth at least equal to the chip thickness; the ridge covered by a metal layer configured as device terminals, and the central area covered by a metal layer configured as attachment pads for the IC terminals with one pad connected to a metal-filled deep-silicon via extending from the central area to the pn-junction; and the terminals of the chip attached to the pads of the central slab area so that the second chip side is co-planar with the device terminals on the slab ridge, whereby the slab serves as the package of the IC chip and the photovoltaic cell powers the IC.
地址 Dallas TX US