Semiconductor device with self-aligned air gap and method for fabricating the same

摘要

A method for fabricating a semiconductor device includes forming a plurality of semiconductor structures over a substrate, forming an interlayer dielectric layer over the semiconductor structures, etching the interlayer dielectric layer, and defining open parts between the semiconductor structures to expose a surface of the substrate, forming sacrificial spacers on sidewalls of the open parts, forming conductive layer patterns in the open parts, and causing the conductive layer patterns and the sacrificial spacers to reach each other, and defining air gaps on the sidewalls of the open parts.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming semiconductor structures over a substrate; defining open parts between the semiconductor structures; forming recessed sacrificial spacers on sidewalls of the open parts, wherein the recessed sacrificial spacers include a first silicidable substance; forming first plugs which comprise a second silicidable substance, in the open parts, in such a way as to be recessed; forming a silicidation preventing layer to cover the first plugs and the recessed sacrificial spacers; forming second plugs over the silicidation preventing layer; and causing the first silicidable substance and the second silicidable substance to react with each other, thereby defining air gaps on the sidewalls of the open parts.