Storage device state detection method

摘要

In a storage device state detection method in which the SOH or SOC of the storage device is inferred from the internal impedance of the storage device: the internal resistance of the storage device is measured by using a signal with a first frequency at which the internal impedance is reduced as a temperature is raised, and the initial SOH or initial SOC of the storage device is calculated from the measured value of the internal resistance; the internal impedance is measured by using a signal with a second frequency at which the internal impedance is increased as a temperature is raised, and the internal temperature of the storage device is calculated from the measured value of the internal impedance; and the SOH or SOC is inferred by using the calculated value of the internal temperature to correct the initial SOH or initial SOC.

主权项

1. A method for detecting a state of a storage device in which an SOH (State of Health) or an SOC (State of Charge) of the storage device is estimated from an internal impedance thereof, the method comprising:
measuring an internal resistance of the storage device using a first signal with a first frequency at which the internal impedance of the storage device decreases as a temperature rises, and calculating an initial SOH or an initial SOC of the storage device from the measured internal resistance; measuring the internal impedance of the storage device using a second signal with a second frequency at which the internal impedance of the storage device increases as the temperature rises, and calculating a value of an internal temperature of the storage device from the measured internal impedance; and estimating the SOH or the SOC using the calculated value of the internal temperature to correct the initial SOH or the initial SOC.