| 发明名称 | Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser | ||
| 摘要 | A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching. | ||
| 申请公布号 | US9640947(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201514820258 | 申请日期 | 2015.08.06 |
| 申请人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA | 发明人 | Holder Casey O.;Feezell Daniel F.;DenBaars Steven P.;Speck James S.;Nakamura Shuji |
| 分类号 | H01S5/183;H01S5/10;H01S5/343;B82Y20/00;H01S5/065;H01S5/00;H01S5/02;H01S5/042;H01S5/20;H01S5/32;H01S5/42 | 主分类号 | H01S5/183 |
| 代理机构 | Gates & Cooper LLP | 代理人 | Gates & Cooper LLP |
| 主权项 | 1. A device, comprising: a non-polar or semi-polar III-nitride Vertical Cavity Surface Emitting Laser (VCSEL), wherein the VCSEL comprises a cavity length such that the VCSEL has single longitudinal mode operation, and; the VCSEL comprises epitaxial layers fabricated by growth on a non-polar m-plane GaN or III-nitride substrate and light emitted by the VCSEL is polarization-locked along an a-direction of the VCSEL, or the VCSEL comprises epitaxial layers fabricated by growth on a semi-polar GaN or III-nitride substrate and light emitted by the VCSEL is polarization-locked along an a-direction of the VCSEL. | ||
| 地址 | Oakland CA US | ||