| 发明名称 | Double self-aligned phase change memory device structure | ||
| 摘要 | A double self-aligned phase change memory device structure, comprising spaced-apart facing phase change memory film members symmetrically arranged with respect to one another, each of the phase change memory film members at an upper portion thereof being in contact with a separate conductive element, and each of the phase change memory film members being in a range of from 5 nm to 25 nm in thickness. Also described are various methods of making such phase change memory device structure. | ||
| 申请公布号 | US9640757(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201314437189 | 申请日期 | 2013.10.28 |
| 申请人 | Entegris, Inc. | 发明人 | Zheng Jun-Fei |
| 分类号 | H01L45/00 | 主分类号 | H01L45/00 |
| 代理机构 | Entegris, Inc. Legal Dept. | 代理人 | Entegris, Inc. Legal Dept. ;Kissoon Nidhi G.;Pillion John E. |
| 主权项 | 1. A double self-aligned phase change memory device structure, comprising spaced-apart facing phase change memory film members symmetrically arranged with respect to one another, each of the phase change memory film members at an upper portion thereof being in contact with a separate conductive element, and each of the phase change memory film members being in a range of from 5 nm to 25 nm in thickness. | ||
| 地址 | Billerica MA US | ||